SPB17N80C3 coolmos ? power transistor features ? new revolutionary high voltage technology ? extreme dv/dt rated ? high peak current capability ? qualified according to jedec 1) for target applications ? pb-free lead plating; rohs compliant ? ultra low gate charge ? ultra low effective capacitances coolmos tm 800v designed for: ? industrial application with high dc bulk voltage ? switching application (i.e. active clamp forward) maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25 c a t c =100 c pulsed drain current 2) i d,pulse t c =25 c avalanche energy, single pulse e as i d =3.4 a, v dd =50 v 670 mj avalanche energy, repetitive t ar 2),3) e ar i d =17 a, v dd =50 v avalanche current, repetitive t ar 2),3) i ar a mosfet d v /d t ruggedness d v /d t v ds =0?640 v v/ns gate source voltage v gs static v ac ( f >1 hz) power dissipation p tot t c =25 c w operating and storage temperature t j , t stg c 30 227 -55 ... 150 0.5 17 50 20 value 17 11 51 v ds 800 v r ds(on)max @ t j = 25c 0.29 ? q g,typ 91 nc product summary type package marking SPB17N80C3 pg-to263 17n80c3 pg-to263 rev. 2. 5 page 1 20 11 -0 9 -2 7
SPB17N80C3 maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous diode forward current i s a diode pulse current 2) i s,pulse 51 reverse diode d v /d t 4) d v /d t 4 v/ns parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 0.55 k/w r thja smd version, device on pcb, minimal footprint --62 smd version, device on pcb, 6 cm 2 cooling area 4) -35- soldering temperature, reflow soldering t sold msl1; 10s - - 260 c electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =250 a 800 - - v avalanche breakdown voltage v (br)ds v gs =0 v, i d =17 a - 870 - gate threshold voltage v gs(th) v ds = v gs , i d =1.0 ma 2.1 3 3.9 zero gate voltage drain current i dss v ds =800 v, v gs =0 v, t j =25 c - - 25 a v ds =800 v, v gs =0 v, t j =150 c - 150 - gate-source leakage current i gss v gs =20 v, v ds =0 v - - 100 na drain-source on-state resistance r ds(on) v gs =10 v, i d =11 a, t j =25 c - 0.25 0.29 ? v gs =10 v, i d =11 a, t j =150 c - 0.67 - gate resistance r g f =1 mhz, open drain - 0.85 - ? value t c =25 c 17 values thermal resistance, junction - ambient rev. 2. 5 page 2 20 11 -0 9 -2 7
SPB17N80C3 parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 2300 - pf output capacitance c oss -94- effective output capacitance, energy related 6) c o(er) -72- effective output capacitance, time related 7) c o(tr) - 210 - turn-on delay time t d(on) -25-ns rise time t r -15- turn-off delay time t d(off) -72- fall time t f -12- gate charge characteristics gate to source charge q gs -12-nc gate to drain charge q gd -45- gate charge total q g - 88 117 gate plateau voltage v plateau - 5.5 - v reverse diode diode forward voltage v sd v gs =0 v, i f =i s , t j =25 c - 1 1.2 v reverse recovery time t rr - 550 - ns reverse recovery charge q rr -15-c peak reverse recovery current i rrm -51-a 1) j-std20 and jesd22 2) pulse width t p limited by t j,max 6) c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss. 7) c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss. 5) device on 40mm*40mm*1.5 epoxy pcb fr4 with 6cm2 (one layer, 70m thick) copper area for drain connection. pcb is vertical without blown ai r v r =400 v, i f = i s , d i f /d t =100 a/s 3) repetitive avalanche causes additional power losses that can be calculated as p av = e ar * f. 4) i sd i d , di/dt 200a/s, v dclink = 400v, v peak SPB17N80C3 1 power dissipation 2 safe operating area p tot =f( t c ) i d =f( v ds ); t c =25 c; d =0 parameter: t p 3 max. transient thermal impedance 4 typ. output characteristics z thjc =f(t p ) i d =f( v ds ); t j =25 c parameter: d=t p / t parameter: v gs 0 40 80 120 160 200 240 0 25 50 75 100 125 150 t c [c] p tot [w] 1 s 10 s 100 s 1 ms 10 ms dc 10 2 10 1 10 0 10 -1 1 10 100 1000 v ds [v] i d [a] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 -1 10 -2 10 -3 10 -4 10 -5 10 0 10 -1 10 -2 t p [s] z thjc [k/w] 5 v 5.5 v 6 v 6.5 v 10 v 20 v 0 10 20 30 40 50 60 0 5 10 15 20 25 v ds [v] i d [a] limited by on-state resistance rev. 2. 5 page 4 20 11 -0 9 -2 7
SPB17N80C3 5 typ. output characteristics 6 typ. drain-source on-state resistance i d =f( v ds ); t j =150 c r ds(on) =f( i d ); t j =150 c parameter: v gs parameter: v gs 7 drain-source on-state resistance 8 typ. transfer characteristics r ds(on) =f( t j ); i d =11 a; v gs =10 v i d =f( v gs ); | v ds |>2| i d | r ds(on)max parameter: t j typ 98 % 0 0.2 0.4 0.6 0.8 -60 -20 20 60 100 140 180 t j [c] r ds(on) [ ? ] 25 c 150 c 0 10 20 30 40 50 60 0246810 v gs [v] i d [a] 6 v 10 v 20 v 4.5 v 5 v 5.5 v 0 5 10 15 20 25 30 35 0 5 10 15 20 25 v ds [v] i d [a] 4 v 4.5 v 5 v 6 v 6.5 v 10 v 5.5 v 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 0 1020304050 i d [a] r ds(on) [ ? ] rev. 2. page 5 20 -0 -2
SPB17N80C3 9 typ. gate charge 10 forward characteristics of reverse diode v gs =f( q gate ); i d =17 a pulsed i f =f( v sd ) parameter: v dd parameter: t j 11 avalanche energy 12 drain-source breakdown voltage e as =f( t j ); i d =3.4 a; v dd =50 v v br(dss) =f( t j ); i d =0.25 ma 25 c 150 c 150c (98%) 25c (98c) 10 2 10 1 10 0 10 -1 0 0.5 1 1.5 2 v sd [v] i f [a] 160 v 640 v 0 2 4 6 8 10 0 20406080100 q gate [nc] v gs [v] 680 720 760 800 840 880 920 960 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] 0 100 200 300 400 500 600 700 25 50 75 100 125 150 t j [c] e as [mj] rev. 2. 5 page 6 20 11 -0 9 -2 7
SPB17N80C3 13 typ. capacitances 14 typ. coss stored energy c =f( v ds ); v gs =0 v; f =1 mhz e oss = f (v ds ) 0 2 4 6 8 10 12 14 16 18 0 100 200 300 400 500 600 700 800 v ds [v] e oss [j] ciss coss crss 10 4 10 3 10 2 10 1 10 0 0 100 200 300 400 500 600 700 800 900 v ds [v] c [pf] rev. 2. 5 page 7 20 11 -0 9 -2 7
SPB17N80C3 definition of diode switching characteristics rev. 2. 5 page 8 20 11 -0 9 -2 7
SPB17N80C3 pg-to263: outline rev. 2. 5 page 9 20 11 -0 9 -2 7
SPB17N80C3 published by infineon technologies ag 81726 munich, germany ? 2008 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office (www.infineon.com). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev. 2. 5 page 10 20 11 -0 9 -2 7
|
